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| CZT2907A PNP SILICON TRANSISTOR Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CZT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose amplifier and switching applications. SOT-223 CASE MAXIMUM RATINGS (TA=25oC) SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg JA UNITS V V V mA W oC oC/W Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 60 60 5.0 600 2.0 -65 to +150 62.5 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO ICBO ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE TEST CONDITIONS VCB=50V VCB=50V, TA=125oC VCE=30V, VBE=0.5V IC=10A IC=10mA IE=10A IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA MIN MAX 10 10 50 UNITS nA A nA V V V V V V V 60 60 5.0 0.4 1.6 1.3 2.6 75 100 302 SYMBOL hFE hFE hFE fT Cob Cib ton td tr toff ts tf TEST CONDITIONS VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, IC=500mA VCE=20V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VBE=2.0V, IC=0, f=1.0MHz VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA MIN 100 100 50 200 MAX 300 UNITS 8.0 30 45 10 40 100 80 30 MHz pF pF ns ns ns ns ns ns All dimensions in inches (mm). LEAD CODE: 1) 2) 3) 4) BASE COLLECTOR EMITTER COLLECTOR R2 303 |
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